The study of the interaction of indium with tellurium in silicon
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Abstract
The perturbed γ-γ angular correlation method has been employed to study indium-impurity pairs in silicon, consisting of the probe atom (111In/111Cd) and several group-VI donors. Such pairs can be identified via the interaction between the quadrupole moments of the probe nucleus and the electric field gradient (EFG) associated with the formed defect complex. A new quadrupole interaction frequency (QIF) of vQ = 444(1) MHz (η = 0) is measured at T = 293 K in Te implanted silicon after annealing the sample above 700 K. The complex is attributed to the In-Te pair along (100)-crystal axis in silicon. In addition, the temperature dependence of the QIF characterizing the pair has also been studied. The implantations of S and Se could not lead to the formation of observable complexes despite similar treatment of all samples.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The study of the interaction of indium with tellurium in silicon</title><author><name sortKey="Tessema, G" uniqKey="Tessema G">G. Tessema</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Science, Department of Physics, Addis Ababa University, P.O. BOX 1176</s1><s2>Addis Ababa</s2><s3>ETH</s3><sZ>1 aut.</sZ></inist:fA14><country>Éthiopie</country><wicri:noRegion>Addis Ababa</wicri:noRegion></affiliation></author><author><name sortKey="Vianden, R" uniqKey="Vianden R">R. Vianden</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Helmholtz-Institut für Strahlen und Kernphysik, Nussalle 14-16</s1><s2>53115 Bonn</s2><s3>DEU</s3><sZ>2 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Bonn</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0426492</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 05-0426492 INIST</idno><idno type="RBID">Pascal:05-0426492</idno><idno type="wicri:Area/Main/Corpus">009C92</idno><idno type="wicri:Area/Main/Repository">009334</idno></publicationStmt><seriesStmt><idno type="ISSN">0947-8396</idno><title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title><title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Atom probe</term><term>Complex defect</term><term>Donor center</term><term>Electric field gradients</term><term>Impurity pair</term><term>Indium additions</term><term>Perturbed angular correlation</term><term>Quadrupole moments</term><term>Silicon</term><term>Tellurium additions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Corrélation angulaire perturbée</term><term>Paire impureté</term><term>Sonde atomique</term><term>Centre donneur</term><term>Addition indium</term><term>Moment quadripolaire</term><term>Gradient champ électrique</term><term>Défaut complexe</term><term>Recuit</term><term>Addition tellure</term><term>Silicium</term><term>Si</term><term>7680</term><term>6172T</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The perturbed γ-γ angular correlation method has been employed to study indium-impurity pairs in silicon, consisting of the probe atom (<sup>111</sup>In/<sup>111</sup>Cd) and several group-VI donors. Such pairs can be identified via the interaction between the quadrupole moments of the probe nucleus and the electric field gradient (EFG) associated with the formed defect complex. A new quadrupole interaction frequency (QIF) of v<sub>Q</sub> = 444(1) MHz (η = 0) is measured at T = 293 K in Te implanted silicon after annealing the sample above 700 K. The complex is attributed to the In-Te pair along (100)-crystal axis in silicon. In addition, the temperature dependence of the QIF characterizing the pair has also been studied. The implantations of S and Se could not lead to the formation of observable complexes despite similar treatment of all samples.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0947-8396</s0></fA01><fA03 i2="1"><s0>Appl. phys., A Mater. sci. process. : (Print)</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The study of the interaction of indium with tellurium in silicon</s1></fA08><fA11 i1="01" i2="1"><s1>TESSEMA (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>VIANDEN (R.)</s1></fA11><fA14 i1="01"><s1>Faculty of Science, Department of Physics, Addis Ababa University, P.O. BOX 1176</s1><s2>Addis Ababa</s2><s3>ETH</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Helmholtz-Institut für Strahlen und Kernphysik, Nussalle 14-16</s1><s2>53115 Bonn</s2><s3>DEU</s3><sZ>2 aut.</sZ></fA14><fA20><s1>1471-1476</s1></fA20><fA21><s1>2005</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16194A</s2><s5>354000131858800260</s5></fA43><fA44><s0>0000</s0><s1>© 2005 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>37 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>05-0426492</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. A, Materials science & processing : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The perturbed γ-γ angular correlation method has been employed to study indium-impurity pairs in silicon, consisting of the probe atom (<sup>111</sup>In/<sup>111</sup>Cd) and several group-VI donors. Such pairs can be identified via the interaction between the quadrupole moments of the probe nucleus and the electric field gradient (EFG) associated with the formed defect complex. A new quadrupole interaction frequency (QIF) of v<sub>Q</sub> = 444(1) MHz (η = 0) is measured at T = 293 K in Te implanted silicon after annealing the sample above 700 K. The complex is attributed to the In-Te pair along (100)-crystal axis in silicon. In addition, the temperature dependence of the QIF characterizing the pair has also been studied. The implantations of S and Se could not lead to the formation of observable complexes despite similar treatment of all samples.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70F80</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A72T</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Corrélation angulaire perturbée</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Perturbed angular correlation</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Paire impureté</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Impurity pair</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Par impureza</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Sonde atomique</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Atom probe</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Sonda atómica</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Centre donneur</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Donor center</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Centro dador</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Addition indium</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium additions</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Moment quadripolaire</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quadrupole moments</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gradient champ électrique</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electric field gradients</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Défaut complexe</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Complex defect</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Defecto complejo</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Recuit</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Annealing</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Addition tellure</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Tellurium additions</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7680</s0><s4>INC</s4><s5>60</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>6172T</s0><s4>INC</s4><s5>61</s5></fC03><fN21><s1>297</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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